band-to-band tunnelling meaning in Chinese

带间隧道效应

A novel flash memory , which uses the source induced band - to - band tunneling hot electron ( sibe ) injection to perform programming , and a pmos selected divided bit - line nor ( pnor ) array architecture are originally introduced in this dissertation
本论文首次提出了一种采用源极诱导带带隧穿热电子注入( sourceinducedband - to - bandtunnelinghotelectroninjection )进行编程操作的新型快闪存储器技术和一种pmos选择分裂位线nor ( pmosselecteddividedbit - linenor )快闪存贮阵列结构。